MGML

Materials Growth & Measurement Laboratory

Jakub Šebesta: Magnetically doped topological insulators from ab-initio calculations.

Seminar on Magnetism
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Date: Wednesday, 09 January 2019 14:10 - 15:10

Venue: lecture room F2, first floor, Ke Karlovu 5 - Prague 2


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We have a pleasure to invite you to attend the joint seminar
of the Department of Condensed Matter Physics (DCMP)
and the Materials Growth and Measurement Laboratory (MGML) http://mgml.eu.

 

Program


Magnetically doped topological insulators from ab-initio calculations

lecture given by:

Jakub Šebesta

Charles University, Faculty of Mathematics and Physics, Department of Condensed Matter Physics, Ke Karlovu 5 121 16 Praha 2, Czech Republic

The seminar takes place in the lecture room F2 
of the Faculty of Mathematics and Physics, Ke Karlovu 5, Praha 2
on Wednesday, 9.1. 2019 from 14:10 

Vladimír Sechovský
On behalf of the DCMP and MGML


Abstract 

The effect of magnetic doping on surface states of topological insulators represents an interesting and highly debated problem, since magnetic field breaks the time-reversal symmetry guaranteeing surface band crossing. The appearance of magnetic band gap changes transport properties of the material and brings new physical phenomena, e.g. QAHE. In addition, their strong SOC offers electric-field control of magnetization. In reality their properties are modified by the presence of native defects, which could appear in these systems as well. Their inclusion allows to obtain a more realistic behavior as compared to the ideal one. It could influence the size of the bulk and surface gap or the presence of ungapped surface states. The mutual interplay between defects is also important.

     In this talk we focus on physical properties of magnetically doped well-known Bi2Se3 3D topological insulator under the presence of native point and layer defects treated by TB-LMTO+CPA within the surface Green’s function approach. We show the impact of the mentioned defects on its bulk and surface band structure, especially on its gap size and magnetism related properties in the case of magnetic doping. The relations between occurring defects are discussed as well.

 

Address
Ke Karlovu 2026/5, 120 00 Praha 2, Czech Republic

 

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All Dates


  • Wednesday, 09 January 2019 14:10 - 15:10

 

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